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dc.contributor.authorBallesteros Garrido, José Antonio
dc.contributor.authorFernández Berlanga, Marcos David
dc.contributor.authorBelenguer, Angel
dc.contributor.authorEsteban, Héctor
dc.contributor.authorBoria, Vicente E.
dc.date.accessioned2019-01-22T12:42:27Z
dc.date.available2019-01-22T12:42:27Z
dc.date.issued2018
dc.identifier.citationIEEE Microwave and Wireless Componentes Letters. 2018, 28, 1531-1309es_ES
dc.identifier.issn1531-1309
dc.identifier.urihttp://hdl.handle.net/10578/19713
dc.description.abstractEmpty Substrate Integrated Waveguide (ESIW) de- vices can provide high quality and completely integrated devices, but they are usually larger than the same ones implemented with alternative technologies. One of the most extended strategies to compact electronic devices is the use of multilayer technology. Nevertheless, to perform multilayer devices in empty substrate integrated waveguide, a versatile and efficient transition between guides in different layers is needed. Currently, only one mul- tilayer device is known in this ESIW technology, which is a transition between a pair of guides built in contiguous layers that requires complex and non-standard 3D manufacturing processes. In this letter, a multilayer transition to connect a pair of guides separated by an arbitrary number of layers is successfully designed and experimentally validated without 3D manufacturing processes. This novel and versatile transition opens the way to further develop multilayer compact devices in ESIW technology such as compact filters.es_ES
dc.formatapplication/pdfes_ES
dc.language.isoenes_ES
dc.publisherEEUU: Institute of Electrical and Electronics Engineers (IEEE)es_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.subjectEmpty substrate integrated waveguide (ESIW)es_ES
dc.subjectTransitiones_ES
dc.subjectMultilayeres_ES
dc.titleVersatile Transition for Multilayer Compact Devices in Empty Substrate Integrated Waveguidees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.DOI10.1109/LMWC.2018.2825653
dc.relation.projectIDTEC2016-75934-C4-3-R


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